characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, 26a) zero gate voltage drain current (v ds = 800v, v gs = 0v) zero gate voltage drain current (v ds = 640v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5ma) 050-7103 rev a 12-2003 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 800 0.140 100500 100 35 apt8014l2ll 800 52 208 3040 893 7.14 -55 to 150 300 5250 3200 apt8014l2ll 800v 52a 0.140 ? ? g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular to-264 max package power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r mosfet to-264 max downloaded from: http:///
dynamic characteristics apt8014l2ll 050-7103 rev a 12-2003 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.160.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.5 0.1 0.3 0.7 0.9 0.05 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 2.37mh, r g = 25 , peak i l = 52a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 52a di / dt 700a/s v r 800v t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d 52a ) reverse recovery time (i s = -i d 52a , dl s /dt = 100a/s) reverse recovery charge (i s = -i d 52a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 52 208 1.3 930 29 10 symbol r jc r ja min typ max 0.14 40 unitc/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy min typ max 72381402 248285 30 170 2019 69 15 10911135 1662 1383 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 400v i d = 52a @ 25c resistive switching v gs = 15v v dd = 400v i d = 52a @ 25c r g = 0.6 inductive switching @ 25c v dd = 533v, v gs = 15v i d = 52a, r g = 1.7 inductive switching @ 125c v dd = 533v, v gs = 15v i d = 52a, r g = 1.7 downloaded from: http:///
050-7103 rev a 12-2003 apt8014l2ll typical performance curves r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 5.5v 6v 6.5v 5v v gs =15 & 10v v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 7v 8v 0 5 10 15 20 25 30 012345678 0 20 40 60 80100120 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 140120 100 8060 40 20 0 6050 40 30 20 10 0 2.52.0 1.5 1.0 0.5 0.0 i d = 26a v gs = 10v normalized to v gs = 10v @ 26a 0.05090.0894 0.0522f0.988f power (watts) rc model junction temp. ( c) case temperature 140120 100 8060 40 20 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 downloaded from: http:///
apt8014l2ll 050-7103 rev a 12-2003 c rss c iss c oss v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 800 0 10 20 30 40 50 0 50 100 150 200 250 300 350 400 0.3 0.5 0.7 0.9 1.1 1.3 1.5 208100 5010 51 1612 84 0 t c =+25c t j =+150c single pulse 10ms 1ms 100s t j =+150c t j =+25c i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 533v r g = 3 t j = 125c l = 100h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 50 v dd = 533v i d = 52a t j = 125c l = 100h e on includes diode reverse recovery. v ds = 400v v ds = 160v v ds = 640v i d = 52a t d(on) t d(off) e on e off 160140 120 100 8060 40 20 0 30002500 2000 1500 1000 500 0 v dd = 533v r g = 3 t j = 125c l = 100h v dd = 533v r g = 3 t j = 125c l = 100h e on includes diode reverse recovery. 20,00010,000 1,000 100200 100 10 1 operation here limited by r ds (on) 140120 100 8060 40 20 0 1200010000 80006000 4000 2000 0 downloaded from: http:///
050-7103 rev a 12-2003 apt8014l2ll typical performance curves figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. to-264 max tm (l2) package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g t j = 125 c drain current drain voltage gate voltage 90% 0 10% 90% t d(off) t f switching energy 10 % t d(on) 90% 10 % 5 % t j = 125 c t r switching energy 5 % downloaded from: http:///
|
